Power_electronics Features

Proving the Ruggedness of GaN technology in Automotive and Demanding Application - issue 4/2020
To achieve the most efficient power conversion circuit requires the best semiconductor switch as the fundamental building block. Many people now consider gallium nitride to be a better switch than...
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Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
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Power Electronics Europe News
GaN Systems highlights design tools and modules at PCIM Europe Digital Days
The  company will showcase its 650V/60A Gen2 automotive transistors which meet enhanced AEC-Q101 performance requirements, its 650V/150A full bridge module and driver, its 650V/150A half bridge intelligent power module (IPM), the 650V/300A three-phase module and driver and 100V integrated DrGaN device and 650V integrated half bridge DrGaN power stage.

It will also be highlighting its latest design tools, including the 65W QR charger reference design which meets size (18.5W/in3 cased), thermals, EMI, cost, and efficiency requirements.

The company also has a Class-D amplifier evaluation kit that includes a two-channel, 200W per channel (8Ω) Class-D audio amplifier and companion 400W, continuous power, audio-grade switch mode power supply.

 “While it will be a different PCIM Europe this year, the global power electronics community will once again converge to exchange knowledge and ideas on trends and technologies shaping our industry,” says Jim Witham, CEO of GaN Systems. He will take part in two panel sessions: 'GaN Devices – The Game-Changers' and 'Power GaN: Past-Present-Future', illustrating how GaN power semiconductors are becoming the fundamental building block in power electronics.

Technical experts from the company will present papers. Jimmy Liu – ‘High Frequency Investigation of Wide Bandgap-Based PFC and LLC Converters in PSU’  (Tuesday 7 July, 2pm central Eastern time) and Roy Hou – ‘the Effect of Dynamic On-State Resistance to System Losses in GaN-Based Hard Switching Half Bridge Applications’ (Wednesday 8 July, 2.05pm CET).



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