Power_electronics Features

Proving the Ruggedness of GaN technology in Automotive and Demanding Application - issue 4/2020
To achieve the most efficient power conversion circuit requires the best semiconductor switch as the fundamental building block. Many people now consider gallium nitride to be a better switch than...
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Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
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Power Electronics Europe News
RigidCSP technology strengthens battery MOSFETs

The package technology is designed for applications such as smartphones, tablets, and thin notebooks where typically higher charging current means that low electrical resistance is desired.

In standard wafer level chip scale packaging (WL- CSP), the substrate can be a significant portion of the total resistance on the back-to-back MOSFETs. A thinner substrate will reduce resistance but also mechanical strength and more stress during the PCB assembly reflow process, which can lead to die warpage or die crack.

The technology can be used for high aspect ratio CSP die size and reduce warpage or breakage during assembly board manufacturing, says the company.

The AOCR32326 and AOCR36330 30V common drain dual N-channel MOSFETs have a maximum resistance of 2.6mΩ at 10V, 2.9mΩ at 8.0V and 4.2mΩ at 4.2V (AOCR32326) and 1.4mΩ at 10V, 1.6mΩ at 8.0V and 2.9mΩ at 4.5V (AOCR36330). The AOCR32326 is supplied in a 6.0 x 2.5mm package and the AOCR36330 package measures 6.22 x 2.5mm.

Both are immediately available in production quantities with a lead-time of 14 to16 weeks.

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